| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| High Speed | |
| Inverting | |
| 2 | |
| MOSFET | |
| 2 | |
| 35 | |
| 35 | |
| 50 | |
| CMOS | |
| 4 | |
| 14 | |
| 0.0002(Typ) | |
| 1.6|3.3|4.2 | |
| 3.3|5.8|8.2 | |
| 2(Typ) | |
| 1090 | |
| -40 | |
| 125 | |
| Extended Industrial | |
| NAND Input | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 5.08(Max) - 0.51(Min) |
| Largeur du paquet | 6.6(Max) |
| Longueur du paquet | 10.16(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | DIP |
| Conditionnement du fournisseur | PDIP |
| 8 | |
| Forme de sonde | Through Hole |
Texas Instruments' TPS2811P power driver will help with fast switching within your circuit. This device has a maximum propagation delay time of 50 ns and a maximum power dissipation of 1090 mW. Its maximum power dissipation is 1090 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device has a minimum operating supply voltage of 4 V and a maximum of 14 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
| EDA / CAD Models |
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