| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| High Speed | |
| Inverting | |
| 2 | |
| MOSFET | |
| 2 | |
| 35 | |
| 35 | |
| 50 | |
| CMOS | |
| 4 | |
| 14 | |
| 0.0002(Typ) | |
| 1.6|3.3|4.2 | |
| 3.3|5.8|8.2 | |
| 2(Typ) | |
| 730 | |
| -40 | |
| 125 | |
| Extended Industrial | |
| NAND Input | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) |
| Largeur du paquet | 3.98(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 8 | |
| Forme de sonde | Gull-wing |
Transistors are never going away, implement this TPS2811DR power driver by Texas Instruments in order to help turn on and off the transistor. This device has a maximum propagation delay time of 50 ns and a maximum power dissipation of 730 mW. Its maximum power dissipation is 730 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device has a minimum operating supply voltage of 4 V and a maximum of 14 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
| EDA / CAD Models |
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