| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 0.185 | |
| 10000 | |
| 0.025 | |
| 6000@10V | |
| 1.7@15V | |
| 0.46 | |
| 0.26 | |
| 23@25V | |
| 5@25V | |
| 1 | |
| 10 | |
| 350 | |
| 35 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 3900@6V|3000@8V|2900@10V | |
| 0.35 | |
| 0.8 | |
| 350 | |
| 4 | |
| 1.4 | |
| 20 | |
| 0.185 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.02(Max) mm |
| Largeur du paquet | 1.4(Max) mm |
| Longueur du paquet | 3.04(Max) mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
As an alternative to traditional transistors, the TP0610K-T1-E3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 350 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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