Microchip TechnologyTN0106N3-G-P013MOSFET
Trans MOSFET N-CH 60V 0.35A 3-Pin TO-92 Ammo
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 0.35 | |
| 3000@10V | |
| 50@25V | |
| 1000 | |
| 3 | |
| 3 | |
| 6 | |
| 2 | |
| -55 | |
| 150 | |
| Ammo | |
| Installation | Through Hole |
| Hauteur du paquet | 5.33(Max) mm |
| Largeur du paquet | 4.19(Max) mm |
| Longueur du paquet | 5.21(Max) mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92 |
| 3 |
This TN0106N3-G-P013 power MOSFET from Microchip Technology can be used for amplification in your circuit. Its maximum power dissipation is 1000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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