| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 80 | |
| 5 | |
| -65 to 150 | |
| 1 | |
| 1.2@375mA@3A | |
| 3 | |
| 25@1A@4V|10@3A@4V | |
| 2000 | |
| -65 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 8.9 |
| Largeur du paquet | 4.45 |
| Longueur du paquet | 10.1 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
If you require a general purpose BJT that can handle high voltages, then the NPN TIP31BG BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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