| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 110 | |
| 8@10V | |
| 160@10V | |
| 160 | |
| 9200@25V | |
| 3750 | |
| 300 | |
| 190 | |
| 140 | |
| 20 | |
| -55 | |
| 175 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.83(Max) mm |
| Largeur du paquet | 9.65(Max) mm |
| Longueur du paquet | 10.41(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 |
Make an effective common source amplifier using this SUM110P06-08L-E3 power MOSFET from Vishay. Its maximum power dissipation is 3750 mW. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
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