| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 40 | |
| ±20 | |
| 50 | |
| 9.4@10V | |
| 102@10V | |
| 102 | |
| 4800@25V | |
| 3000 | |
| 140 | |
| 60 | |
| 145 | |
| 10 | |
| -55 | |
| 175 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.38(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SUD50P04-09L-E3 power MOSFET can provide a solution. Its maximum power dissipation is 3000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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