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VishaySUD50N04-8M8P-4GE3MOSFET
Trans MOSFET N-CH 40V 14A 3-Pin(2+Tab) DPAK
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 3 | |
| 14 | |
| 100 | |
| 1 | |
| 8.8@10V | |
| 16@4.5V|37@10V | |
| 37 | |
| 4.5 | |
| 6.5 | |
| 14 | |
| 2400@20V | |
| 260 | |
| 3100 | |
| 15 | |
| 15 | |
| 45 | |
| 30 | |
| -55 | |
| 150 | |
| 6.9@10V|8.4@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.39(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Use Vishay's SUD50N04-8M8P-4GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 3100 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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