| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| 18.3 | |
| 60@10V | |
| 26@10V | |
| 26 | |
| 7 | |
| 4.5 | |
| 1140@25V | |
| 130 | |
| 2300 | |
| 30 | |
| 9 | |
| 65 | |
| 8 | |
| -55 | |
| 150 | |
| 48@10V|61@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.39(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Amplify electronic signals and switch between them with the help of Vishay's SUD19P06-60-GE3 power MOSFET. Its maximum power dissipation is 2300 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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