| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±18 | |
| 2.5 | |
| 150 | |
| 3 | |
| 100 | |
| 1 | |
| 110@10V | |
| 4.5@10V | |
| 4.5 | |
| 0.9 | |
| 1.7 | |
| 8.1 | |
| 121@25V | |
| 11@25V | |
| 1 | |
| 45 | |
| 2000 | |
| 8 | |
| 20 | |
| 12 | |
| 19 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 90@10V|130@5V | |
| 2 | |
| 9 | |
| 78 | |
| 3.5 | |
| 19 | |
| 1.3 | |
| 1.7 | |
| 18 | |
| 3 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.65(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SO N |
| 8 | |
| Forme de sonde | Gull-wing |
As an alternative to traditional transistors, the STS2DNF30L power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes stripfet technology.
| EDA / CAD Models |
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