STMicroelectronicsSTP34NM60NDMOSFET
Trans MOSFET N-CH Si 600V 29A 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±25 | |
| 29 | |
| 110@10V | |
| 80.4@10V | |
| 80.4 | |
| 2785@50V | |
| 190000 | |
| 61.8 | |
| 53.4 | |
| 111 | |
| 30 | |
| -55 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15(Max) mm |
| Largeur du paquet | 4.6(Max) mm |
| Longueur du paquet | 10.4(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Create an effective common drain amplifier using this STP34NM60ND power MOSFET from STMicroelectronics. Its maximum power dissipation is 190000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with fdmesh ii technology.
| EDA / CAD Models |
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