50-75% de réduction
STMicroelectronicsSTI24NM60NMOSFET
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) I2PAK Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 17 | |
| 190@10V | |
| 46@10V | |
| 46 | |
| 1330@50V | |
| 125000 | |
| 37 | |
| 16.5 | |
| 73 | |
| 11.5 | |
| -55 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 8.95 mm |
| Largeur du paquet | 4.4 mm |
| Longueur du paquet | 10 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | I2PAK |
| 3 | |
| Forme de sonde | Through Hole |
As an alternative to traditional transistors, the STI24NM60N power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 125000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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