STMicroelectronicsSTGFW40V60DFPuce IGBT
Trans IGBT Chip N-CH 600V 80A 62.5W 3-Pin(3+Tab) TO-3PF Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.8 | |
| 80 | |
| 0.25 | |
| 62.5 | |
| -55 | |
| 175 | |
| Industrial | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 26.7(Max) |
| Largeur du paquet | 5.7(Max) |
| Longueur du paquet | 15.7(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3PF |
| 3 | |
| Forme de sonde | Through Hole |
Use the STGFW40V60DF IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is -55 to 150 mW. It has a maximum collector emitter voltage of 25 V. It is made in a dual parallel configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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