STMicroelectronicsSTGE200NB60SModule IGBT
Trans IGBT Module N-CH 600V 200A 600W 4-Pin ISOTOP Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single Dual Emitter | |
| 1.2 | |
| 600 | |
| 600 | |
| ±20 | |
| 200 | |
| 0.1 | |
| -55 | |
| 150 | |
| Industrial | |
| Tube | |
| Installation | Screw |
| Hauteur du paquet | 9.1(Max) |
| Largeur du paquet | 25.5(Max) |
| Longueur du paquet | 38.2(Max) |
| Carte électronique changée | 4 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | ISOTOP |
| 4 |
The STGE200NB60S IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. Its maximum power dissipation is 600000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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