STMicroelectronicsSTD3NK80Z-1MOSFET
Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) IPAK Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 2.5 | |
| 4500@10V | |
| 19@10V | |
| 19 | |
| 485@25V | |
| 70000 | |
| 40 | |
| 27 | |
| 36 | |
| 17 | |
| -55 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 6.2(Max) mm |
| Largeur du paquet | 2.4(Max) mm |
| Longueur du paquet | 6.6(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | IPAK |
| 3 | |
| Forme de sonde | Through Hole |
This STD3NK80Z-1 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 70000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology.
| EDA / CAD Models |
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