STMicroelectronicsSTD2HNK60Z-1MOSFET
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 2 | |
| 4800@10V | |
| 11@10V | |
| 11 | |
| 280@25V | |
| 45000 | |
| 50 | |
| 30 | |
| 13 | |
| 10 | |
| -55 | |
| 150 | |
| Industrial | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 6.2(Max) mm |
| Largeur du paquet | 2.4(Max) mm |
| Longueur du paquet | 6.6(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | IPAK |
| 3 | |
| Forme de sonde | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the STD2HNK60Z-1 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 45000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes supermesh technology.
| EDA / CAD Models |
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