| Supplier Unconfirmed | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 80 | |
| 11@10V | |
| 117@10V | |
| 117 | |
| 3700@25V | |
| 300000 | |
| 30 | |
| 100 | |
| 66 | |
| 25 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.6(Max) mm |
| Largeur du paquet | 9.35(Max) mm |
| Longueur du paquet | 10.4(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Use STMicroelectronics' STB76NF80 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes stripfet ii technology.
| EDA / CAD Models |
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