STMicroelectronicsSTB24N60M2MOSFET
Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±25 | |
| 4 | |
| 18 | |
| 10000 | |
| 1 | |
| 190@10V | |
| 29@10V | |
| 29 | |
| 1060@100V | |
| 150000 | |
| 9 | |
| 60 | |
| 14 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.6(Max) |
| Largeur du paquet | 9.35(Max) |
| Longueur du paquet | 10.4(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this STB24N60M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 150000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh technology.
| EDA / CAD Models |
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