STMicroelectronicsSTB20NM50FDT4MOSFET
Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 20 | |
| 250@10V | |
| 38@10V | |
| 38 | |
| 1380@25V | |
| 192000 | |
| 15 | |
| 20 | |
| 22 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.6(Max) mm |
| Largeur du paquet | 9.35(Max) mm |
| Longueur du paquet | 10.4(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the STB20NM50FDT4 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 192000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
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