| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±6 | |
| 1 | |
| 12 | |
| 1000 | |
| 1 | |
| 12@4.5V | |
| 37.6@4.5V | |
| 2700@10V | |
| 2500 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) |
| Largeur du paquet | 2 |
| Longueur du paquet | 2 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | UDFN-B EP |
| 6 | |
| Forme de sonde | No Lead |
Amplify electronic signals and switch between them with the help of Toshiba's SSM6J505NU,LF power MOSFET. Its maximum power dissipation is 2500 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes u-mos vi technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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