| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±12 | |
| 1 | |
| 4 | |
| 10000 | |
| 1 | |
| 56@4.5V | |
| 2.2@4.5V | |
| 200@10V | |
| 2000 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Largeur du paquet | 1.8 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23F |
| 3 | |
| Forme de sonde | Flat |
This SSM3K324R,LF power MOSFET from Toshiba can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1000 mW. This MOSFET transistor has a minimum operating temperature of -50 °C and a maximum of 150 °C. This device is made with u-mos vii-h technology.
| EDA / CAD Models |
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