| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.5 | |
| 0.1 | |
| 1000 | |
| 1 | |
| 3600@4V | |
| 13.5@3V | |
| 100 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Largeur du paquet | 1 mm |
| Longueur du paquet | 0.6 mm |
| Carte électronique changée | 3 |
| Conditionnement du fournisseur | CST |
| 3 | |
| Forme de sonde | No Lead |
Make an effective common gate amplifier using this SSM3K15ACT(TPL3) power MOSFET from Toshiba. Its maximum power dissipation is 100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
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