VishaySQS460EN-T1_GE3MOSFET
Trans MOSFET N-CH 60V 8A 8-Pin PowerPAK 1212 EP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.5 | |
| -55 to 175 | |
| 8 | |
| 100 | |
| 1 | |
| 36@10V | |
| 13@10V | |
| 13 | |
| 603@25V | |
| 39000 | |
| 8 | |
| 8 | |
| 19 | |
| 5 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) mm |
| Largeur du paquet | 3.05 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
This SQS460EN-T1_GE3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 39000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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