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SQS460ENT1GE3|VISHAY|simage
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MOSFETs

SQS460EN-T1_GE3

Trans MOSFET N-CH 60V 8A 8-Pin PowerPAK 1212 EP T/R Automotive AEC-Q101

Vishay
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Active
  • 美国海关商品代码
    8541.29.00.55
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    8
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    36@10V
  • Typical Gate Charge @ Vgs (nC)
    13@10V
  • Typical Gate Charge @ 10V (nC)
    13
  • Typical Input Capacitance @ Vds (pF)
    603@25V
  • Maximum Power Dissipation (mW)
    39000
  • Typical Fall Time (ns)
    8
  • Typical Rise Time (ns)
    8
  • Typical Turn-Off Delay Time (ns)
    19
  • Typical Turn-On Delay Time (ns)
    5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.07(Max)
  • Package Width
    3.05
  • Package Length
    3.05
  • PCB changed
    8
  • Supplier Package
    PowerPAK 1212 EP
  • Pin Count
    8

文档和资源

数据表
设计资源