VishaySQM120N06-3M5L-GE3MOSFET
Trans MOSFET N-CH 60V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.5 | |
| -55 to 175 | |
| 120 | |
| 3.5@10V | |
| 220@10V | |
| 220 | |
| 11755@25V | |
| 375000 | |
| 35 | |
| 23 | |
| 83 | |
| 19 | |
| -55 | |
| 175 | |
| Automotive | |
| 20 | |
| 0.8 | |
| 1.5 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.83(Max) mm |
| Largeur du paquet | 9.65(Max) mm |
| Longueur du paquet | 10.41(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Amplify electronic signals and switch between them with the help of Vishay's SQM120N06-3M5L_GE3 power MOSFET. Its maximum power dissipation is 375000 mW. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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