VishaySQJ488EP-T1_GE3MOSFET
Trans MOSFET N-CH 100V 42A 5-Pin(4+Tab) PowerPAK SO T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 2.5 | |
| 42 | |
| 100 | |
| 1 | |
| 21@10V | |
| 18@10V | |
| 18 | |
| 782@50V | |
| 83000 | |
| 4.6 | |
| 11 | |
| 20 | |
| 4 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07 mm |
| Largeur du paquet | 4.37 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 4 |
| Onglet | Tab |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | PowerPAK SO |
| 5 | |
| Forme de sonde | Gull-wing |
Amplify electronic signals and switch between them with the help of Vishay's SQJ488EP-T1_GE3 power MOSFET. Its maximum power dissipation is 83000 mW. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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