onsemiSPZT651T1GGP BJT
Trans GP BJT NPN 60V 2A 800mW 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 80 | |
| 60 | |
| 5 | |
| 1.2@100mA@1A | |
| 0.3@100mA@1A|0.5@200mA@2A | |
| 2 | |
| 75@50mA@2V|75@500mA@2V|75@1A@2V|40@2A@2V | |
| 800 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.57 mm |
| Largeur du paquet | 3.5 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-223 |
| 4 | |
| Forme de sonde | Gull-wing |
Compared to other transistors, the NPN SPZT651T1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 800 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.