Infineon Technologies AGSPP08N50C3XKSA1MOSFET
Trans MOSFET N-CH 560V 7.6A 3-Pin(3+Tab) TO-220AB Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 560 | |
| ±20 | |
| 7.6 | |
| 600@10V | |
| 32@10V | |
| 32 | |
| 750@25V | |
| 83000 | |
| 7 | |
| 5 | |
| 60 | |
| 6 | |
| -55 | |
| 150 | |
| Tube | |
| 500@10V | |
| Installation | Through Hole |
| Hauteur du paquet | 9.25 |
| Largeur du paquet | 4.4 |
| Longueur du paquet | 10 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Use Infineon Technologies' SPP08N50C3XKSA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 83000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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