onsemiSMMBT3906WT1GGP BJT
Trans GP BJT PNP 40V 0.2A 150mW 3-Pin SC-70 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Yes |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 40 | |
| 5 | |
| 0.85@1mA@10mA|0.95@5mA@50mA | |
| 0.25@1mA@10mA|0.4@5mA@50mA | |
| 0.2 | |
| 60@0.1mA@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | |
| 150 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.85 mm |
| Largeur du paquet | 1.24 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-70 |
| 3 | |
| Forme de sonde | Gull-wing |
The versatility of this PNP SMMBT3906WT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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