| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 20 | |
| 2.2 | |
| 40 | |
| 100 | |
| 1 | |
| 2.15@10V | |
| 22.5@4.5V|51@10V | |
| 51 | |
| 3595@15V | |
| 3700 | |
| 8|10 | |
| 10|17 | |
| 25|30 | |
| 12|24 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) |
| Largeur du paquet | 3.05 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SISA04DN-T1-GE3 power MOSFET. Its maximum power dissipation is 3700 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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