| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 30 | |
| 29@10V | |
| 6.7@4.5V|14.2@10V | |
| 14.2 | |
| 611@50V | |
| 3700 | |
| 8|9 | |
| 11|13 | |
| 17|21 | |
| 8|10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) mm |
| Largeur du paquet | 3.05 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
Amplify electronic signals and switch between them with the help of Vishay's SIS892DN-T1-GE3 power MOSFET. Its maximum power dissipation is 3700 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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