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VishaySIS402DN-T1-GE3MOSFET
Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 EP T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| -55 to 150 | |
| 35 | |
| 100 | |
| 1 | |
| 6@10V | |
| 12@4.5V|28@10V | |
| 28 | |
| 4.6 | |
| 5.4 | |
| 17 | |
| 1700@15V | |
| 140@15V | |
| 1.15 | |
| 350 | |
| 3800 | |
| 15 | |
| 20 | |
| 25 | |
| 25 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4.8@10V|6.4@4.5V | |
| 3.8 | |
| 70 | |
| 81 | |
| 0.8 | |
| 3.2 | |
| 25 | |
| 1.2 | |
| 2.4 | |
| 20 | |
| 19 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) mm |
| Largeur du paquet | 3.05 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SIS402DN-T1-GE3 power MOSFET. Its maximum power dissipation is 3800 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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