| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 60 | |
| 6.3@10V | |
| 47.5@10V|36.5@7.5V|24@4.5V | |
| 47.5 | |
| 2289@40V | |
| 5400 | |
| 9 | |
| 10 | |
| 41 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 20.7 | |
| 5.4 | |
| 65 | |
| 0.75 | |
| 3.2 | |
| 46 | |
| 1.1 | |
| 0.3 | |
| 2 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) mm |
| Largeur du paquet | 5.89 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | PowerPAK SO EP |
| 8 |
Looking for a component that can both amplify and switch between signals within your circuit? The SIR880ADP-T1-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 5400 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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