| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±12 | |
| 1.5 | |
| -55 to 150 | |
| 50 | |
| 100 | |
| 1 | |
| 2.3@10V | |
| 41@4.5V|89@10V | |
| 89 | |
| 7.6 | |
| 7.4 | |
| 17 | |
| 5125@10V | |
| 510@10V | |
| 0.6 | |
| 1050 | |
| 5200 | |
| 27 | |
| 15 | |
| 70 | |
| 27 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 80 | |
| 0.65 | |
| 30 | |
| 1.1 | |
| 0.4 | |
| 2.4 | |
| 12 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) |
| Largeur du paquet | 5.89 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | PowerPAK SO EP |
| 8 | |
| Forme de sonde | No Lead |
Compared to traditional transistors, SIR800DP-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 5200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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