| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±12 | |
| 1.5 | |
| -55 to 150 | |
| 50 | |
| 100 | |
| 1 | |
| 2.3@10V | |
| 41@4.5V|89@10V | |
| 89 | |
| 7.6 | |
| 7.4 | |
| 17 | |
| 5125@10V | |
| 510@10V | |
| 0.6 | |
| 1050 | |
| 5200 | |
| 27 | |
| 15 | |
| 70 | |
| 27 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 80 | |
| 0.65 | |
| 30 | |
| 1.1 | |
| 0.4 | |
| 2.4 | |
| 12 | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) |
| Package Width | 5.89 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | PowerPAK SO EP |
| 8 | |
| Lead Shape | No Lead |
Compared to traditional transistors, SIR800DP-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 5200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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