VishaySIR438DP-T1-GE3MOSFET
SIR438DP-T1-GE3 Vishay MOSFETs Transistor N-CH 25V 60A 8-Pin PowerPAK SO T/R - Arrow.com
| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| ±20 | |
| 60 | |
| 1.8@10V | |
| 32.6@4.5V|70@10V | |
| 70 | |
| 4560@10V | |
| 5400 | |
| 8|20 | |
| 9|21 | |
| 41|40 | |
| 15|37 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) |
| Largeur du paquet | 5.89 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | PowerPAK SO EP |
| 8 | |
| Forme de sonde | No Lead |
If you need to either amplify or switch between signals in your design, then Vishay's SIR438DP-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 5400 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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