| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.55 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 40 | |
| 5@10V | |
| 24@4.5V|50@10V | |
| 50 | |
| 2410@20V | |
| 5000 | |
| 12 | |
| 73 | |
| 32 | |
| 19 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 23.5 | |
| 5 | |
| 70 | |
| 0.71 | |
| 2.3 | |
| 24 | |
| 1.1 | |
| 0.2 | |
| 1.4 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) |
| Largeur du paquet | 5.89 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | PowerPAK SO EP |
| 8 | |
| Forme de sonde | No Lead |
Amplify electronic signals and switch between them with the help of Vishay's SIR418DP-T1-GE3 power MOSFET. Its maximum power dissipation is 5000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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