| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 20 | |
| 270@10V | |
| 65@10V | |
| 65 | |
| 2451@25V | |
| 250000 | |
| 44 | |
| 27 | |
| 32 | |
| 80 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 20.82(Max) |
| Largeur du paquet | 5.31(Max) |
| Longueur du paquet | 15.87(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AC |
| 3 | |
| Forme de sonde | Through Hole |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SIHG20N50C-E3 power MOSFET. Its maximum power dissipation is 250000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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