10-25% de reduction
VishaySIHD7N60E-GE3MOSFET
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| 7 | |
| 100 | |
| 1 | |
| 600@10V | |
| 20@10V | |
| 20 | |
| 680@100V | |
| 78000 | |
| 14 | |
| 13 | |
| 24 | |
| 13 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.38(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Use Vishay's SIHD7N60E-GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 78000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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