| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| -55 to 150 | |
| 33 | |
| 1000 | |
| 1 | |
| 99@10V | |
| 100@10V | |
| 100 | |
| 3508@100V | |
| 278000 | |
| 54 | |
| 60 | |
| 99 | |
| 28 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.83(Max) mm |
| Largeur du paquet | 9.65(Max) mm |
| Longueur du paquet | 10.41(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 |
Increase the current or voltage in your circuit with this SIHB33N60E-GE3 power MOSFET from Vishay. Its maximum power dissipation is 27800 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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