| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±12 | |
| 6 | |
| 46@4.5V | |
| 3.5@4.5V|7.5@10V | |
| 7.5 | |
| 350@10V | |
| 1950 | |
| 10|12 | |
| 12 | |
| 15|18 | |
| 5|10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) |
| Largeur du paquet | 1.6 |
| Longueur du paquet | 1.6 |
| Carte électronique changée | 6 |
| Conditionnement du fournisseur | PowerPAK SC-75 |
| 6 | |
| Forme de sonde | No Lead |
Create an effective common drain amplifier using this SIB406EDK-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1950 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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