| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| ±12 | |
| 1.4 | |
| 4.5 | |
| 10000 | |
| 1 | |
| 59@4.5V | |
| 15@10V | |
| 15 | |
| 1900 | |
| 10 | |
| 20|12 | |
| 25 | |
| 20|5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75 mm |
| Largeur du paquet | 2.05 mm |
| Longueur du paquet | 2.05 mm |
| Carte électronique changée | 6 |
| Conditionnement du fournisseur | PowerPAK SC-70 |
| 6 | |
| Forme de sonde | No Lead |
Create an effective common drain amplifier using this SIA921EDJ-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1900 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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