VishaySIA906EDJ-T1-GE3MOSFET
Trans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±12 | |
| 1.4 | |
| -55 to 150 | |
| 4.5 | |
| 8000 | |
| 1 | |
| 46@4.5V | |
| 3.5@4.5V|7.5@10V | |
| 7.5 | |
| 0.75 | |
| 0.95 | |
| 8 | |
| 350@10V | |
| 37@10V | |
| 0.6 | |
| 63 | |
| 1900 | |
| 10|12 | |
| 12 | |
| 15|18 | |
| 5|10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 37@4.5V|51@2.5V | |
| 1.9 | |
| 15 | |
| 110 | |
| 0.8 | |
| 2 | |
| 15 | |
| 1.2 | |
| 12 | |
| 4.5 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) mm |
| Largeur du paquet | 2.05 mm |
| Longueur du paquet | 2.05 mm |
| Carte électronique changée | 6 |
| Conditionnement du fournisseur | PowerPAK SC-70 EP |
| 6 | |
| Forme de sonde | No Lead |
Increase the current or voltage in your circuit with this SIA906EDJ-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1900 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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