| Compliant | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±8 | |
| 1 | |
| 12 | |
| 29@4.5V | |
| 23@4.5V|38@8V | |
| 6.5 | |
| 3 | |
| 20 | |
| 1800@10V | |
| 450 | |
| 3500 | |
| 40 | |
| 40|12 | |
| 65|70 | |
| 10|20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 24@4.5V|28@2.5V|36@1.8V|50@1.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) |
| Largeur du paquet | 2.05 |
| Longueur du paquet | 2.05 |
| Carte électronique changée | 6 |
| Conditionnement du fournisseur | PowerPAK SC-70 EP |
| 6 |
If you need to either amplify or switch between signals in your design, then Vishay's SIA413DJ-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 3500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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