| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| 0.18um | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±12 | |
| 1.5 | |
| 8 | |
| 100 | |
| 1 | |
| 18@4.5V | |
| 22@10V|10@4.5V | |
| 22 | |
| 1.7 | |
| 2.5 | |
| 10 | |
| 1200@10V | |
| 220 | |
| 2000 | |
| 12|10 | |
| 10|12 | |
| 25|35 | |
| 10|15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 17@2.5V|15@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.55(Max) |
| Largeur du paquet | 4(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
This SI9926CDY-T1-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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