| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 12 | |
| ±8 | |
| 1 | |
| 3.9 | |
| 100 | |
| 1 | |
| 47@4.5V | |
| 6.5@4.5V|11@8V | |
| 900 | |
| 12 | |
| 20 | |
| 30 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.2 |
| Largeur du paquet | 0.8 |
| Longueur du paquet | 0.8 |
| Carte électronique changée | 4 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | Micro Foot |
| 4 | |
| Forme de sonde | Ball |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI8806DB-T2-E1 power MOSFET. Its maximum power dissipation is 900 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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