| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 16 | |
| 32@4.5V | |
| 14.5@4.5V|20@5V | |
| 20 | |
| 1300@10V | |
| 2770 | |
| 30 | |
| 25|10 | |
| 50|55 | |
| 20|7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.3 mm |
| Largeur du paquet | 0.96 mm |
| Longueur du paquet | 1.46 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | Micro Foot |
| 6 |
This SI8499DB-T2-E1 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 2770 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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