| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±12 | |
| 13 | |
| 53@4.5V | |
| 16.3@4.5V|32.6@10V | |
| 32.6 | |
| 1320@15V | |
| 2770 | |
| 25|22 | |
| 10|15 | |
| 60|75 | |
| 17|50 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.3 |
| Largeur du paquet | 0.96 |
| Longueur du paquet | 1.46 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | Micro Foot |
| 6 |
Amplify electronic signals and switch between them with the help of Vishay's SI8497DB-T2-E1 power MOSFET. Its maximum power dissipation is 2770 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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