| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 1.2 | |
| 5.4 | |
| 5000 | |
| 1 | |
| 44@10V | |
| 8.6@4.5V|17.5@10V | |
| 17.5 | |
| 765@10V | |
| 1800 | |
| 25|28 | |
| 20|8 | |
| 50|68 | |
| 27|6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.26 |
| Largeur du paquet | 0.96 |
| Longueur du paquet | 0.96 |
| Carte électronique changée | 4 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | Micro Foot |
| 4 | |
| Forme de sonde | Ball |
Compared to traditional transistors, SI8489EDB-T2-E1 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1800 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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