| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 2.2 | |
| 100 | |
| 1 | |
| 135@10V | |
| 20@10V | |
| 20 | |
| 4.7 | |
| 2.7 | |
| 100 | |
| 1 | |
| 3800 | |
| 15 | |
| 10 | |
| 25 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 10 | |
| 0.78 | |
| 50 | |
| 1.2 | |
| 0.8 | |
| 2.6 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) |
| Largeur du paquet | 3.05 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
Create an effective common drain amplifier using this SI7818DN-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 1500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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